a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv ces i c = 10 ma 65 v bv ebo i e = 5.0 ma 4.0 v i cbo v cb = 30 v 3.0 ma h fe v ce = 5.0 v i c = 500 ma 10 120 --- c ob v cb = 28 v f = 1.0 mhz 35 40 pf p g v cc = 28 v p out = 30 w f = 400 mhz 9.0 65 70 db % npn silicon rf power transistor CD6105 package style .280 4l stud description: the asi CD6105 is designed for class c amplifiers in 225 to 400 mhz military communication equipment. features: ? p g = 9.5 db typical at 400 mhz ? economical .280? stud package ? omnigold ? metalization system maximum ratings i c 5.0 a v ces 65 v v ebo 4.0 v p diss 70 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 2.5 c/w minimum inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 b c d e f g a maximum .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm h .245 / 6.22 .255 / 6.48 dim 1.010 / 25.65 1.055 / 26.80 i j .217 / 5.51 .220 / 5.59 k .175 / 4.45 .285 / 7.24 .275 / 6.99 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 g k h f e d c b 45 a #8-32 unc i j c b e e
|
